Electronic and transport properties in geometrically disordered graphene antidot lattices

Electronic properties of disordered graphene antidot lattices

Shengjun Yuan,1,* Rafael Roldán,2,† Antti-Pekka Jauho,3 and M. I. Katsnelson1 1Radboud University of Nijmegen, Institute for Molecules and Materials, Heijendaalseweg 135, 6525 AJ Nijmegen, The Netherlands 2Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco E28049 Madrid, Spain 3Center for Nanostructured Graphene (CNG), DTU Nanotech, Department of Microand Nanotechnology, Technical ...

Electronic properties of graphene antidot lattices

Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three nu...

Charge transport gap in graphene antidot lattices

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Screening and Collective Modes in Disordered Graphene Antidot Lattices

Optical properties of graphene antidot lattices

Thomas G. Pedersen,1 Christian Flindt,2 Jesper Pedersen,2 Antti-Pekka Jauho,2,3 Niels Asger Mortensen,2 and Kjeld Pedersen1 1Department of Physics and Nanotechnology, Aalborg University, DK-9220 Aalborg Ø, Denmark 2Department of Micro and Nanotechnology, NanoDTU, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark 3Laboratory of Physics, Helsinki University of Technology, P.O. Box ...